BSP220,115 datasheet

Маркировка

BSP220,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BSP220,115 Configuration: Single Dual Drain Continuous Drain Current: 0.225 A Current - Continuous Drain (id) @ 25?° C: 225mA Drain To Source Voltage (vdss): 200V Drain-source Breakdown Voltage: 200 V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951769 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1.5W Power Dissipation: 1500 mW Rds On (max) @ Id, Vgs: 12 Ohm @ 200mA, 10V Resistance Drain-source Rds (on): 12 Ohm @ 10 V Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 2.8V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: - 200 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 12 Ohms Factory Pack Quantity: 1000 Part # Aliases: BSP220 T/R Other Names: 934000490115::BSP220 T/R::BSP220 T/R
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12 шт.
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